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| SI4884BDY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)a 16.5 13.2 rDS(on) (W) 0.0090 @ VGS = 10 V 0.012 @ VGS = 4.5 V Qg (Typ) 10.5 10 5 nC D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT SO-8 S S S G 1 2 3 4 Top View Ordering Information: SI4884BDY-T1--E3 (Lead (Pb)-free) S N-Channel MOSFET 8 7 6 5 D D D D G D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 150_C) TC = 70_C TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source-Drain Diode Current Source Drain TC = 25_C TA = 25_C TC = 25_C Maximum Power Dissipation TC = 70_C TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 "20 16.5 13.2 12.4b, c 10.0b, c 50 4.0 2.3b, c 4.45 2.85 2.50b, c 1.6b, c -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25_C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 85 _C/W. Document Number: 73454 S-51450--Rev. A, 01-Aug-05 www.vishay.com t p 10 sec Steady State Symbol RthJA RthJF Typical 40 22 Maximum 50 28 Unit _C/W 1 SI4884BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea VDS DVDS/TJ DVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A VDS = 15 V, ID = 10 A 30 0.007 0.0095 45 0.0090 0.012 1 30 30 6 3 "100 1 10 mV/_C V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 10 V, Rg = 1 W VDD = 15 V, RL = 1.5 W ID ^ 10 A, VGEN = 4.5 V, Rg = 1 W f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 12 A VDS = 15 V, VGS = 0 V, f = 1 MHz 1525 295 120 23.5 10.5 VDS = 15 V, VGS = 4.5 V, ID= 12 A 4.3 3 1.4 18 160 18 8 8 11 22 8 2.2 30 240 30 15 15 18 35 15 ns W 35 17 nC pF Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta IS ISM VSD trr Qrr ta tb IF = 9.5 A, di/dt = 100 A/ms, TJ = 25_C 95A A/ms IS = 2.3 A 0.75 25 15 13 12 ns TC = 25_C 4 A 50 1.1 40 25 V ns nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73454 S-51450--Rev. A, 01-Aug-05 2 SI4884BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V I D - Drain Current (A) I D - Drain Current (A) 40 1.2 Vishay Siliconix Transfer Characteristics 1.0 0.8 30 0.6 TC = 125_C 0.4 25_C 20 10 3V 0 0.0 0.2 -55_C 0.3 0.6 0.9 1.2 1.5 0.0 1.0 1.4 1.8 2.2 2.6 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 0.014 2000 Capacitance Ciss rDS(on) - On-Resistance (W) 0.012 C - Capacitance (pF) 1600 0.010 VGS = 4.5 V 1200 0.008 VGS = 10 V 800 0.006 400 Crss Coss 0.004 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) ID = 12 A 8 rDS(on) - On-Resistance (Normalized) VDS = 10 V 6 VDS = 15 V VDS = 20 V 1.4 1.6 On-Resistance vs. Junction Temperature ID = 10 A 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) Document Number: 73454 S-51450--Rev. A, 01-Aug-05 TJ - Junction Temperature (_C) www.vishay.com 3 SI4884BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 rDS(on) - Drain-to-Source On-Resistance (W) 10 TJ = 150_C I S - Source Current (A) 1 0.05 ID = 10 A 0.04 On-Resistance vs. Gate-to-Source Voltage 0.03 0.1 TJ = 25_C 0.01 0.02 TJ = 125_C 0.01 TJ = 25_C 0.00 0.001 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 100 Single Pulse Power, Junction-to-Ambient 0.3 80 ID = 250 mA Power (W) 60 VGS(th) (V) 0.0 -0.3 40 -0.6 20 -0.9 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 *Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 1s 0.1 TA = 25_C Single Pulse 0.01 0.1 1 10 100 10 s dc VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73454 S-51450--Rev. A, 01-Aug-05 SI4884BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* 20 Vishay Siliconix 16 ID - Drain Current (A) 12 8 4 0 0 25 50 75 100 125 150 TC - Case Temperature (_C) Power, Junction-to-Foot 5.5 2.0 Power, Junction-to-Ambient 4.4 1.6 3.3 Power Power 2.2 1.2 0.8 1.1 0.4 0.0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (_C) TC - Case Temperature (_C) *The power dissipation PD is based on TJ(max) = 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73454 S-51450--Rev. A, 01-Aug-05 www.vishay.com 5 SI4884BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73454. www.vishay.com Document Number: 73454 S-51450--Rev. A, 01-Aug-05 6 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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